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| Fast Recovery Epitaxial Diode (FRED) DSEI 12 IFAVM = 11 A VRRM = 1200 V trr = 50 ns VRSM V 1200 VRRM V 1200 Type A C TO-220 AC C A DSEI 12-12A A = Anode, C = Cathode C Symbol IFRMS IFAVM yyx IFRM IFSM Test Conditions TVJ = TVJM TC = 100C; rectangular, d = 0.5 tP < 10 ms; rep. rating, pulse width limited by TVJM TVJ = 45C; t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine Maximum Ratings 25 11 150 75 80 65 70 28 27 21 20 -40...+150 150 -40...+150 A A A A A A A A2s A2s A2s A2s C C C W Nm g Features q q q q q TVJ = 150C; t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine I2t TVJ = 45C t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine q q International standard package JEDEC TO-220 AC Planar passivated chips Very short recovery time Extremely low switching losses Low IRM-values Soft recovery behaviour Epoxy meets UL 94V-0 TVJ = 150C; t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine TVJ TVJM Tstg Ptot Md Weight TC = 25C Mounting torque Applications q q q q 78 0.4...0.6 2 q q q Symbol Test Conditions Characteristic Values typ. max. 250 150 4 2.2 2.6 1.65 46.2 1.6 0.5 60 mA mA mA V V V mW K/W K/W K/W ns A q Antiparallel diode for high frequency switching devices Anti saturation diode Snubber diode Free wheeling diode in converters and motor control circuits Rectifiers in switch mode power supplies (SMPS) Inductive heating and melting Uninterruptible power supplies (UPS) Ultrasonic cleaners and welders IR TVJ = 25C TVJ = 25C TVJ = 125C IF = 12 A; VR = VRRM VR = 0.8 * VRRM VR = 0.8 * VRRM TVJ = 150C TVJ = 25C Advantages q q VF VT0 rT RthJC RthCK RthJA trr IRM q q q For power-loss calculations only TVJ = TVJM High reliability circuit operation Low voltage peaks for reduced protection circuits Low noise switching Low losses Operating at lower temperature or space saving by reduced cooling IF = 1 A; -di/dt = 50 A/ms; VR = 30 V; TVJ = 25C VR = 540 V; IF = 12 A; -diF/dt = 100 A/ms L 0.05 mH; TVJ = 100C 50 6.5 70 7.2 (c) 2000 IXYS All rights reserved 1-2 033 x IFAVM rating includes reverse blocking losses at TVJM, VR = 0.8 VRRM, duty cycle d = 0.5 Data according to IEC 60747 IXYS reserves the right to change limits, test conditions and dimensions DSEI 12, 1200 V 30 A 25 20 15 10 5 0 0 1 VF 2 3 V 4 TVJ=25C TVJ=100C TVJ=150C 3.0 C 2.5 2.0 1.5 1.0 max. 0.5 0.0 1 10 -diF/dt 100 A/s 1000 typ. TVJ=100C VR= 540V IRM 30 TVJ=100C A V =540V R 25 max. 20 15 10 5 0 0 100 200 -diF/dt IF Qr IF=11A IF=22A IF=11A IF=5.5A IF=11A IF=22A IF=11A IF=5.5A typ. 300 A/s 400 Fig. 1 Forward current versus voltage drop. 1.4 1.2 1.0 Kf Fig. 2 Recovery charge versus -diF/dt. Fig. 3 Peak reverse current versus -diF/dt. 60 V 50 40 30 tfr 20 400 VFR 1200 ns 1000 800 tfr 600 1.0 s 0.8 TVJ=100C VR=540V IRM 0.8 0.6 trr max. 0.6 IF=11A IF=22A IF=11A IF=5.5A VFR QR 0.4 0.4 0.2 0.2 0.0 0 40 TJ 80 120 C 160 0.0 0 100 200 -diF/dt 300 A/s 400 typ. 10 0 0 100 200 diF/dt TVJ=125C IF=11A 300 A/s 400 200 0 Fig. 4 Dynamic parameters versus junction temperature. Fig. 5 Recovery time versus -diF/dt. Fig. 6 Peak forward voltage versus diF/dt. Dimensions Dim. A B C D E F G H J K L M N Q Millimeter Min. Max. 12.70 14.73 14.23 16.51 9.66 10.66 3.54 4.08 5.85 2.54 1.15 0.64 4.83 3.56 0.38 2.04 0.64 6.85 3.42 1.77 6.35 0.89 5.33 4.82 0.56 2.49 1.39 Min. Inches Max. 0.500 0.580 0.560 0.650 0.380 0.420 0.139 0.161 0.230 0.420 0.100 0.135 0.045 0.070 0.250 0.025 0.035 0.190 0.210 0.140 0.190 0.015 0.022 0.080 0.115 0.025 0.055 Fig. 7 Transient thermal impedance junction to case. (c) 2000 IXYS All rights reserved 2-2 |
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